View HGTG27N120BN04_1249519.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HGTG27N120BN / HGT5A27N120BN
Data Sheet October 2004
72A, 1200V, NPT Series N-Channel IGBT
The HGTG27N120BN and HGT5A27N120BN are NonPunch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49280.
Features
* 72A, 1200V, TC = 25oC * 1200V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Thermal Impedance SPICE Model Temperature Compensating SABERTM Model www.fairchildsemi.com * Avalanche Rated
Packaging
JEDEC STYLE TO-247
E C G
Ordering Information
PART NUMBER HGTG27N120BN HGT5A27N120BN PACKAGE TO-247 TO-247-ST BRAND G27N120BN 27N120BN
COLLECTOR (BOTTOM SIDE METAL)
NOTE: When ordering, use the entire part number.
Symbol
C
JEDEC STYLE TO-247-ST
G COLLECTOR (BOTTOM SIDE METAL) E C G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
(c)2004 Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C2
HGTG27N120BN / HGT5A27N120BN
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTG27N120BN Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 72 34 216 20 30 150A at 1200V 500 4.0 135 -55 to 150 260 8 15 W W/oC mJ
oC oC
UNITS V A A A V V
1200
s s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Pulse width limited by Max junction temperature. 2. ICE = 30A, L = 400H, TJ = 125oC 3. VCE(PK) = 960V, TJ = 125oC, RG = 3.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = 1200V TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC MIN 1200 15 6 150 TYP 300 2.45 3.8 6.6 9.2 270 350 24 20 195 80 2.2 2.7 2.3 MAX 250 4 2.7 4.2 250 325 420 30 25 240 120 3.3 2.8 UNITS V V A A mA V V V nA A V nC nC ns ns ns ns mJ mJ mJ
Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
VCE(SAT) VGE(TH) IGES SSOA VGEP QG(ON) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF
IC = 27A, VGE = 15V VGE = 20V
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge
IC = 250A, VCE = VGE TJ = 150oC, RG = 3, VGE = 15V, L = 200H, VCE(PK) = 1200V IC = IC110 , VCE = 0.5 BVCES IC = 27A, VCE = 600V VGE = 15V VGE = 20V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4)
IGBT and Diode at TJ = 25oC, ICE = 27A, VCE = 960V, VGE = 15V, RG = 3, L = 1mH, Test Circuit (Figure 18)
(c)2004 Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C2
HGTG27N120BN / HGT5A27N120BN
Electrical Specifications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4) Thermal Resistance Junction To Case NOTES: 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RJC TEST CONDITIONS IGBT and Diode at TJ = 150oC, ICE = 27A, VCE = 960V, VGE = 15V, RG = 3, L = 1mH, Test Circuit (Figure 18) MIN TYP 22 20 220 140 2.7 5.1 3.4 MAX 28 25 280 200 6.5 4.2 0.25 UNITS ns ns ns ns mJ mJ mJ
oC/W
Typical Performance Curves
80 ICE , DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
ICE, COLLECTOR TO EMITTER CURRENT (A) 200 TJ = 150oC, RG = 3, VGE = 15V, L = 200H 160
VGE = 15V 70 60 50 40 30 20 10 0 25 50 75 100 125 150
120
80
40
0
0
200
400
600
800
1000
1200
1400
TC , CASE TEMPERATURE (oC)
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
TJ = 150oC, RG = 3, L = 1mH, V CE = 960V TC 100 50 75oC 75oC VGE 15V 12V
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
fMAX, OPERATING FREQUENCY (kHz)
VCE = 960V, RG = 3, TJ = 125oC
ISC 400
40
30
300
10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.25oC/W, SEE NOTES 1 5 10 20 ICE, COLLECTOR TO EMITTER CURRENT (A) 60
20 tSC 10
200
TC 110oC 110oC
VGE 15V 12V
100
0 11
12
13
14
15
0 16
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
(c)2004 Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C2
ISC, PEAK SHORT CIRCUIT CURRENT (A)
50
500
HGTG27N120BN / HGT5A27N120BN Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A) 140 120 100 TC = -55oC 80 60 40 20 0 TC = 25oC DUTY CYCLE <0.5%, VGE = 12V 250s PULSE TEST
Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A) 200
DUTY CYCLE <0.5%, VGE = 15V 250s PULSE TEST
160
TC = 150oC
120 TC = -55oC 80 TC = 25oC TC = 150oC
40
0 0 2 4 6 8 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
2 4 6 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
10
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
15.0 12.5 TJ = 150oC, VGE = 12V, VGE = 15V 10.0 7.5 5.0 2.5 TJ = 25oC, VGE = 12V, VGE = 15V 0 5 10 15 20 25 30 35 40 45 50 55 60 ICE , COLLECTOR TO EMITTER CURRENT (A) EOFF, TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) RG = 3, L = 1mH, VCE = 960V
6 RG = 3, L = 1mH, VCE = 960V 5 TJ = 150oC, VGE = 12V OR 15V 4 3 2 1 0 TJ = 25oC, VGE = 12V OR 15V
5
10
15
20
25
30
35
40
45
50
55
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
40 RG = 3, L = 1mH, VCE = 960V tdI , TURN-ON DELAY TIME (ns)
80 RG = 3, L = 1mH, VCE = 960V 70
35 trI , RISE TIME (ns) 60 50 40 30 20 TJ = 25oC, TJ = 150oC, VGE = 15V 15 5 10 15 20 25 30 35 40 45 50 55 60 10 0 5 10 15 20 25 TJ = 25oC, TJ = 150oC, VGE = 15V TJ = 25oC, TJ = 150oC, VGE = 12V
30 TJ = 25oC, TJ = 150oC, VGE = 12V 25
20
30
35
40
45
50
55
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
(c)2004 Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C2
HGTG27N120BN / HGT5A27N120BN Typical Performance Curves
400 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 3, L = 1mH, VCE = 960V 350 tfI , FALL TIME (ns) VGE = 12V, VGE = 15V, TJ = 150oC 300 VGE = 12V, VGE = 15V, TJ = 25oC 250
Unless Otherwise Specified (Continued)
250 RG = 3, L = 1mH, VCE = 960V 200
150
TJ = 150oC, VGE = 12V OR 15V
100
200
50
TJ = 25oC, VGE = 12V OR 15V
150 5
10
15
20
25
30
35
40
45
50
55
60
0
5
10
15
20
25
30
35
40
45
50
55
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
350 300 250 200 150 100 50 0
VGE, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE <0.5%, VCE = 20V 250s PULSE TEST
16 14
IG(REF) = 2mA, RL = 22.2, TC = 25oC VCE = 1200V
12 10 8 6 4 2 0 0 50 100 150 200 250 300 VCE = 400V VCE = 800V
TC = 25oC TC = 150oC TC = -55oC
7
8
12 13 11 VGE, GATE TO EMITTER VOLTAGE (V)
9
10
14
15
QG , GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
10 FREQUENCY = 1MHz 8 CIES
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
DUTY CYCLE <0.5%, TC = 110oC 35 250s PULSE TEST 30 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGE = 15V VGE = 10V
C, CAPACITANCE (nF)
6
4 CRES 2 COES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
(c)2004 Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C2
HGTG27N120BN / HGT5A27N120BN Typical Performance Curves
ZJC , NORMALIZED THERMAL RESPONSE
Unless Otherwise Specified (Continued)
100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-1 PD t2 100 101 t1
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
RHRP30120 90% VGE L = 1mH VCE RG = 3 + 90% ICE VDD = 960V 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2
-
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
(c)2004 Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C2
HGTG27N120BN / HGT5A27N120BN Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 19. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0).
(c)2004 Fairchild Semiconductor Corporation
HGTG27N120BN / HGT5A27N12BN Rev. C2
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM
Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM
StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I13

▲Up To Search▲

Price & Availability of HGTG27N120BN04

	To Download HGTG27N120BN04 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .